SI7942DP-T1-GE3
| Part No | SI7942DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16107
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.94 | |
| 10 | 2.8812 | |
| 100 | 2.793 | |
| 1000 | 2.7048 | |
| 10000 | 2.5872 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 15 ns |
| Rise Time | 15 ns |
| Rds On Max | 49 mΩ |
| Schedule B | 8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Power Dissipation | 1.4 W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 15 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Dual |
| Max Power Dissipation | 1.4 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 49 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 3.8 A |
| Drain to Source Voltage (Vdss) | 100 V |
