SI8802DB-T2-E1
| Part No | SI8802DB-T2-E1 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 8V MICROFOOT |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19039
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5772 | |
| 10 | 0.5657 | |
| 100 | 0.5483 | |
| 1000 | 0.531 | |
| 10000 | 0.5079 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 7 ns |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| Rise Time | 15 ns |
| REACH SVHC | Unknown |
| Rds On Max | 54 mΩ |
| Resistance | 54 mΩ |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Nominal Vgs | 350 mV |
| Case/Package | BGA |
| Number of Pins | 4 |
| Contact Plating | Tin |
| Power Dissipation | 500 mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Max Power Dissipation | 900 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 44 mΩ |
| Gate to Source Voltage (Vgs) | 5 V |
| Continuous Drain Current (ID) | 3.5 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drain to Source Breakdown Voltage | 8 V |
