SI9407BDY-T1-GE3
| Part No | SI9407BDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 60V 4.7A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
38509
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8964 | |
| 10 | 0.8785 | |
| 100 | 0.8516 | |
| 1000 | 0.8247 | |
| 10000 | 0.7888 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 506.605978 mg |
| Fall Time | 30 ns |
| Lead Free | Lead Free |
| Rise Time | 70 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 120 mΩ |
| Resistance | 120 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SO |
| Number of Pins | 8 |
| Input Capacitance | 600 pF |
| Power Dissipation | 2.4 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 100 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -3.2 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -60 V |
| Drain to Source Breakdown Voltage | -60 V |
