SIA440DJ-T1-GE3
RoHS

SIA440DJ-T1-GE3

SIA440DJ-T1-GE3

Vishay

MOSFET N-CH 40V 12A SC-70

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SIA440DJ-T1-GE3

Availability: 16136 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time5 ns
Rise Time32 ns
REACH SVHCUnknown
Rds On Max26 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins6
Input Capacitance700 pF
Power Dissipation3.5 W
Number of Channels1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)8.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V