SIR172ADP-T1-GE3
RoHS

SIR172ADP-T1-GE3

SIR172ADP-T1-GE3

Vishay

MOSFET N-CH 30V 24A 8-SO

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SIR172ADP-T1-GE3

Availability: 19661 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time23 ns
Rds On Max8.5 mΩ
Resistance8.9 mΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance1.515 nF
Power Dissipation3.9 W
Number of Channels1
Number of Elements1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation29.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)24 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V