SIR172ADP-T1-GE3
| Part No | SIR172ADP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 24A 8-SO |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19661
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5123 | |
| 10 | 0.5021 | |
| 100 | 0.4867 | |
| 1000 | 0.4713 | |
| 10000 | 0.4508 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 506.605978 mg |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 23 ns |
| Rds On Max | 8.5 mΩ |
| Resistance | 8.9 mΩ |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 1.515 nF |
| Power Dissipation | 3.9 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Max Power Dissipation | 29.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 8.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 24 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
