SIR418DP-T1-GE3
RoHS

SIR418DP-T1-GE3

SIR418DP-T1-GE3

Vishay

MOSFET N-CH 40V 40A PPAK SO-8

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SIR418DP-T1-GE3

Availability: 17881 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time12 ns
Rise Time73 ns
REACH SVHCUnknown
Rds On Max5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs2.4 V
Number of Pins8
Input Capacitance2.41 nF
Power Dissipation5 W
Threshold Voltage2.4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time19 ns
Radiation HardeningNo
Turn-Off Delay Time32 ns
Max Power Dissipation39 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V