SIR418DP-T1-GE3
| Part No | SIR418DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 40V 40A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
17881
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3 | |
| 10 | 1.274 | |
| 100 | 1.235 | |
| 1000 | 1.196 | |
| 10000 | 1.144 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 506.605978 mg |
| Fall Time | 12 ns |
| Rise Time | 73 ns |
| REACH SVHC | Unknown |
| Rds On Max | 5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 2.4 V |
| Number of Pins | 8 |
| Input Capacitance | 2.41 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | 2.4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 19 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32 ns |
| Max Power Dissipation | 39 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 40 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain to Source Breakdown Voltage | 40 V |
