SIR850DP-T1-GE3
RoHS

SIR850DP-T1-GE3

SIR850DP-T1-GE3

Vishay

MOSFET N-CH 25V 30A PPAK SO-8

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SIR850DP-T1-GE3

Availability: 18345 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time11 ns
Rise Time20 ns
REACH SVHCUnknown
Rds On Max7 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.12 nF
Power Dissipation4.8 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation41.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.3 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)25 V
Drain to Source Breakdown Voltage25 V