SISS27DN-T1-GE3
RoHS

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Vishay

MOSFET P-CH 30V 50A PPAK 1212-8S

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SISS27DN-T1-GE3

Availability: 16923 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Height830 µm
Fall Time20 ns
PackagingDigi-Reel®
Rise Time45 ns
Rds On Max5.6 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance5.25 nF
Power Dissipation4.8 W
Number of Channels1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation57 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance4.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-23 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V