SQ2362ES-T1_GE3
| Part No | SQ2362ES-T1_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 4.4A TO236 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
35937
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6592 | |
| 10 | 0.646 | |
| 100 | 0.6262 | |
| 1000 | 0.6065 | |
| 10000 | 0.5801 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 18 ns |
| Lead Free | Lead Free |
| Rise Time | 20 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 95 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-236-3 |
| Number of Pins | 3 |
| Input Capacitance | 1 nF |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 14 ns |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 57 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 4.3 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
