SQ3427EV-T1_GE3
RoHS

SQ3427EV-T1_GE3

SQ3427EV-T1_GE3

Vishay

MOSFET P-CH 60V 6TSOP

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SQ3427EV-T1_GE3

Availability: 15477 pieces
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Specifications
RoHSNon-Compliant
Height1.1 mm
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Power Dissipation5 W
Number of Channels1
Turn-On Delay Time8 ns
Turn-Off Delay Time25 ns
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance79 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5.3 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V