SQ4401EY-T1_GE3
| Part No | SQ4401EY-T1_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 17.3A |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
46700
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0456 | |
| 10 | 2.9847 | |
| 100 | 2.8933 | |
| 1000 | 2.802 | |
| 10000 | 2.6801 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 506.605978 mg |
| Fall Time | 44 ns |
| Rise Time | 76 ns |
| REACH SVHC | Unknown |
| Rds On Max | 14 mΩ |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | -2 V |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 4.25 nF |
| Power Dissipation | 1.8 W |
| Threshold Voltage | -2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 58 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 67 ns |
| Element Configuration | Single |
| Max Power Dissipation | 7.14 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 11 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 17.3 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain to Source Breakdown Voltage | -40 V |
