SQJ422EP-T1_GE3
RoHS

SQJ422EP-T1_GE3

Part No SQJ422EP-T1_GE3
Manufacturer Vishay
Description MOSFET N-CH 40V 75A PPAK SO-8
Datasheet Download Datasheet
ECAD Module SQJ422EP-T1_GE3
Spot quantity: 18626
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5714
10 1.54
100 1.4928
1000 1.4457
10000 1.3828
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Specifications
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max3.4 mΩ
Number of Pins6
Input Capacitance4.66 nF
Power Dissipation83 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time29 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.4 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)75 A
Drain to Source Voltage (Vdss)40 V