SQJ456EP-T1_GE3
RoHS

SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

Vishay

MOSFET N-CH 100V 32A PPAK SO-8

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SQJ456EP-T1_GE3

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Specifications
Vgs(th) (Max) @ Id3.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SO-8
SeriesAutomotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs26 mOhm @ 9.3A, 10V
Power Dissipation (Max)83W (Tc)
PackagingCut Tape (CT)
Package / CasePowerPAK® SO-8
Other NamesSQJ456EP-T1_GE3CT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3342pF @ 25V
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C32A (Tc)