SQJ886EP-T1_GE3
| Part No | SQJ886EP-T1_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 40V 60A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18796
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3137 | |
| 10 | 1.2874 | |
| 100 | 1.248 | |
| 1000 | 1.2086 | |
| 10000 | 1.1561 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 6 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel (TR) |
| Rise Time | 17 ns |
| REACH SVHC | Unknown |
| Rds On Max | 4.5 mΩ |
| Number of Pins | 8 |
| Input Capacitance | 2.922 nF |
| Power Dissipation | 55 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29 ns |
| Max Power Dissipation | 55 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain to Source Breakdown Voltage | 40 V |
