SUM110N10-09-E3
| Part No | SUM110N10-09-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 110A D2PAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19939
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.512 | |
| 10 | 4.4218 | |
| 100 | 4.2864 | |
| 1000 | 4.151 | |
| 10000 | 3.9706 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 9.65 mm |
| Height | 4.83 mm |
| Length | 10.41 mm |
| Weight | 1.437803 g |
| Fall Time | 130 ns |
| Lead Free | Lead Free |
| Rise Time | 125 ns |
| REACH SVHC | Unknown |
| Rds On Max | 9.5 mΩ |
| Resistance | 9.5 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 4 V |
| Termination | SMD/SMT |
| Case/Package | TO-263 |
| Number of Pins | 3 |
| Input Capacitance | 6.7 nF |
| Power Dissipation | 3.75 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Dual Supply Voltage | 100 V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.75 W |
| Reverse Recovery Time | 70 ns |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
