
Availability:
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Specifications
Collector-Emitter Breakdown Voltage (Vceo) | 400V |
---|---|
Power Dissipation (Pd) | 500mW |
Collector Current (Ic) | 200mA |
DC Current Gain (hFE@Ic,Vce) | 100@50mA,1V |
Transition Frequency (fT) | 70MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@50mA,5mA |
Transistor Type | PNP |
Operating Temperature | +150u2103@(Tj) |