2SB709A
RoHS

2SB709A

2SB709A

Changjiang Electronics

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2SB709A

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Specifications
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)210@2mA,10V
Transition Frequency (fT)60MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@100mA,10mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)