CY7C1069GN30-10ZSXI
RoHS

CY7C1069GN30-10ZSXI

CY7C1069GN30-10ZSXI

Cypress Semiconductor

SRAM Async SRAMS

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CY7C1069GN30-10ZSXI

Availability: 13624 pieces
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Specifications
Width10.16mm
Length22.415mm
HTS Code8542.32.00.41
PackagingTray
TechnologySRAM - Asynchronous
Memory Size16Mb 2M x 8
Memory TypeVolatile
Part StatusActive
RoHS StatusROHS3 Compliant
JESD-30 CodeR-PDSO-G54
Memory Width8
Organization2MX8
Memory FormatSRAM
Mounting TypeSurface Mount
Surface MountYES
Memory Density16777216 bit
Package / Case54-TSOP (0.400, 10.16mm Width)
Supply Voltage3.3V
Terminal Pitch0.8mm
Memory InterfaceParallel
Voltage - Supply2.2V~3.6V
Access Time (Max)10 ns
Factory Lead Time13 Weeks
Terminal PositionDUAL
Height Seated (Max)1.2mm
Number of Functions1
Operating Temperature-40°C~85°C TA
Number of Terminations54
Supply Voltage-Max (Vsup)3.6V
Supply Voltage-Min (Vsup)3V
Write Cycle Time - Word, Page10ns
Moisture Sensitivity Level (MSL)3 (168 Hours)