CY7C1418AV18-167BZC
RoHS

CY7C1418AV18-167BZC

CY7C1418AV18-167BZC

Cypress Semiconductor

CY7C1418AV18 36 Mb (2 M x 18) 167 MHz 1.8 V DDR-II 2-Word Burst SRAM -FBGA-165

CY7C1418AV18-167BZC

Availability: 16400 pieces
Request Quotation
Specifications
Width15mm
Length17mm
Density36 Mb
HTS Code8542.32.00.41
I/O TypeCOMMON
ECCN Code3A991.B.2.A
Lead FreeContains Lead
PackagingTray
Pin Count165
Published2006
TechnologySRAM - Synchronous, DDR II
Access Time500 ps
Memory Size36Mb 2M x 18
Memory TypeVolatile
Part StatusObsolete
RoHS StatusNon-RoHS Compliant
Memory Width18
Organization2MX18
JESD-609 Codee0
Memory FormatSRAM
Mounting TypeSurface Mount
Surface MountYES
Number of Pins165
Package / Case165-LBGA
Supply Voltage1.8V
Terminal Pitch1mm
Clock Frequency167MHz
Terminal FinishTin/Lead (Sn/Pb)
Base Part NumberCY7C1418
Memory InterfaceParallel
Voltage - Supply1.7V~1.9V
Terminal PositionBOTTOM
Additional FeaturePIPELINED ARCHITECTURE
Supply Current-Max0.5mA
Height Seated (Max)1.4mm
Number of Functions1
Standby Current-Max0.22A
Standby Voltage-Min1.7V
Qualification StatusNot Qualified
Operating Temperature0°C~70°C TA
Reach Compliance Codenot_compliant
Number of Terminations165
Output Characteristics3-STATE
Operating Supply Voltage1.8V
Supply Voltage-Max (Vsup)1.9V
Supply Voltage-Min (Vsup)1.7V
Peak Reflow Temperature (Cel)220
Moisture Sensitivity Level (MSL)3 (168 Hours)
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED