FM25V10-G
RoHS

FM25V10-G

FM25V10-G

Cypress Semiconductor

F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

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FM25V10-G

Availability: 23634 pieces
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Specifications
Width3.9mm
Length4.9mm
SeriesF-RAM™
HTS Code8542.32.00.71
ECCN CodeEAR99
PackagingTube
Pin Count8
Published2012
TechnologyFRAM (Ferroelectric RAM)
Memory Size1Mb 128K x 8
Memory TypeNon-Volatile
Part StatusActive
Pbfree Codeyes
RoHS StatusROHS3 Compliant
SubcategorySRAMs
JESD-30 CodeR-PDSO-G8
Memory Width8
Organization128KX8
JESD-609 Codee3
Memory FormatFRAM
Mounting TypeSurface Mount
Surface MountYES
Memory Density1048576 bit
Operating ModeSYNCHRONOUS
Package / Case8-SOIC (0.154, 3.90mm Width)
Power Supplies2.5/3.3V
Supply Voltage3.3V
Terminal Pitch1.27mm
Clock Frequency40MHz
Terminal FinishTin (Sn)
Base Part NumberFM25V10
Memory InterfaceSPI
Voltage - Supply2V~3.6V
Factory Lead Time6 Weeks
Terminal PositionDUAL
Supply Current-Max0.003mA
Height Seated (Max)1.75mm
Number of Functions1
Standby Current-Max0.00015A
Qualification StatusNot Qualified
Operating Temperature-40°C~85°C TA
Number of Terminations8
Supply Voltage-Max (Vsup)3.6V
Supply Voltage-Min (Vsup)2V
Peak Reflow Temperature (Cel)260
Moisture Sensitivity Level (MSL)3 (168 Hours)
Time@Peak Reflow Temperature-Max (s)30