DB106G
RoHS

DB106G

DB106G

GeneSiC Semiconductor

BRIDGE RECT 1PHASE 800V 1A DB

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DB106G

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Specifications
PackageBulk
Series-
ProductStatusActive
DiodeTypeSingle Phase
TechnologyStandard
Voltage-PeakReverse(Max)800 V
Current-AverageRectified(Io)1 A
Voltage-Forward(Vf)(Max)@If1.1 V @ 1 A
Current-ReverseLeakage@Vr10 µA @ 800 V
OperatingTemperature-55°C ~ 150°C (TJ)
MountingTypeThrough Hole
Package/Case4-EDIP (0.321, 8.15mm)
SupplierDevicePackageDB
Grade
Qualification