IXTA18P10T
| Part No | IXTA18P10T |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET P-CH 100V 18A TO263 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
11533
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6878 | |
| 10 | 1.654 | |
| 100 | 1.6034 | |
| 1000 | 1.5528 | |
| 10000 | 1.4853 |
Specifications
| Package | Tube |
|---|---|
| Series | TrenchP™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 120mOhm @ 9A, 10V |
| RdsOn(Max)@Id | 4.5V @ 250µA |
| Vgs | 39 nC @ 10 V |
| Vgs(th)(Max)@Id | ±15V |
| Vgs(Max) | 2100 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 83W (Tc) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
| OperatingTemperature | Surface Mount |
| MountingType | TO-263AA |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
