IPD053N08N3GATMA1
RoHS

IPD053N08N3GATMA1

IPD053N08N3GATMA1

Infineon

MOSFET N-CH 80V 90A TO252-3

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IPD053N08N3GATMA1

Availability: 15332 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Fall Time10 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time66 ns
Rds On Max5.3 mΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Halogen FreeHalogen Free
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance3.57 nF
Power Dissipation150 W
Turn-On Delay Time18 ns
On-State Resistance5.3 mΩ
Turn-Off Delay Time38 ns
Max Power Dissipation150 W
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.4 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)90 A
Drain to Source Voltage (Vdss)80 V