IPD082N10N3GATMA1
| Part No | IPD082N10N3GATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 80A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15924
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1614 | |
| 10 | 2.1182 | |
| 100 | 2.0533 | |
| 1000 | 1.9885 | |
| 10000 | 1.902 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 8 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 42 ns |
| Rds On Max | 8.2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-252-3 |
| Number of Pins | 3 |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Package Quantity | 2500 |
| Input Capacitance | 2.99 nF |
| Power Dissipation | 125 W |
| Turn-On Delay Time | 18 ns |
| On-State Resistance | 8.2 mΩ |
| Turn-Off Delay Time | 31 ns |
| Max Power Dissipation | 125 W |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 80 A |
| Drain to Source Voltage (Vdss) | 100 V |
