IPD33CN10NGATMA1
RoHS

IPD33CN10NGATMA1

IPD33CN10NGATMA1

Infineon

MOSFET N-CH 100V 27A TO252-3

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IPD33CN10NGATMA1

Availability: 16245 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Fall Time4 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time21 ns
Rds On Max33 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Halogen FreeHalogen Free
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance1.18 nF
Power Dissipation58 W
Turn-On Delay Time11 ns
On-State Resistance33 mΩ
Turn-Off Delay Time17 ns
Max Power Dissipation58 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)27 A
Drain to Source Voltage (Vdss)100 V