IPD60R3K3C6ATMA1
| Part No | IPD60R3K3C6ATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 600V 1.7A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
17430
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6205 | |
| 10 | 0.6081 | |
| 100 | 0.5895 | |
| 1000 | 0.5709 | |
| 10000 | 0.546 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 6.22 mm |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Weight | 3.949996 g |
| Fall Time | 60 ns |
| Packaging | Tape & Reel |
| Rise Time | 10 ns |
| Rds On Max | 3.3 Ω |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-252-3 |
| Number of Pins | 3 |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Package Quantity | 2500 |
| Input Capacitance | 93 pF |
| Power Dissipation | 18.1 W |
| Number of Channels | 1 |
| Turn-On Delay Time | 8 ns |
| On-State Resistance | 3.3 Ω |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 18.1 W |
| Max Dual Supply Voltage | 600 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.3 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Continuous Drain Current (ID) | 1.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
