IRF1018EPBF
RoHS

IRF1018EPBF

IRF1018EPBF

Infineon

MOSFET N-CH 60V 79A TO220AB

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IRF1018EPBF

Availability: 49978 pieces
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Specifications
RoHSCompliant
MountThrough Hole
Width4.826 mm
Height9.017 mm
Length10.668 mm
Fall Time46 ns
Lead FreeLead Free
Rise Time35 ns
REACH SVHCNo SVHC
Rds On Max8.4 mΩ
Resistance8.4 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-220AB
Recovery Time39 ns
Number of Pins3
Contact PlatingTin
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity1000
Input Capacitance2.29 nF
Power Dissipation110 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
On-State Resistance8.4 mΩ
Radiation HardeningNo
Turn-Off Delay Time55 ns
Element ConfigurationSingle
Max Power Dissipation110 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.1 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)79 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V