IRF3711S
RoHS

IRF3711S

IRF3711S

Infineon

MOSFET N-CH 20V 110A D2PAK

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IRF3711S

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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
SeriesHEXFET®
Rds On (Max) @ Id, Vgs6 mOhm @ 15A, 10V
Power Dissipation (Max)3.1W (Ta), 120W (Tc)
PackagingTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names*IRF3711S
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds2980pF @ 10V
Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionN-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C110A (Tc)