Availability:
13757
pieces
Specifications
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
|---|---|
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-262 |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.8A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names | *IRFSL17N20D |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Detailed Description | N-Channel 200V 16A (Tc) 3.8W (Ta), 140W (Tc) Through Hole TO-262 |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
