Availability:
11173
pieces
Specifications
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-262 |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 38A, 10V |
| Power Dissipation (Max) | 140W (Tc) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names | *IRL7833LPBF SP001568782 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 4170pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 150A (Tc) 140W (Tc) Through Hole TO-262 |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
