RJP020N06
RoHS

RJP020N06

RJP020N06

ROHM

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN

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RJP020N06

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Specifications
RoHSNon-Compliant
MountSurface Mount
Width2.5 mm
Height1.5 mm
Length4.5 mm
Number of Pins4
Input Capacitance160 pF
Turn-On Delay Time8 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation2 W
Drain to Source Resistance240 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)2 A