SCT3120ALGC11
| Part No | SCT3120ALGC11 |
|---|---|
| Manufacturer | ROHM |
| Description | SICFET N-CH 650V 21A TO247N |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
11798
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.744 | |
| 10 | 7.5891 | |
| 100 | 7.3568 | |
| 1000 | 7.1245 | |
| 10000 | 6.8147 |
Specifications
| Package | Tube |
|---|---|
| Series | - |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOn | 18V |
| MinRdsOn) | 156mOhm @ 6.7A, 18V |
| RdsOn(Max)@Id | 5.6V @ 3.33mA |
| Vgs | 38 nC @ 18 V |
| Vgs(th)(Max)@Id | +22V, -4V |
| Vgs(Max) | 460 pF @ 500 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 103W (Tc) |
| PowerDissipation(Max) | 175°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-247N |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| Qualification |
