MTD6P10ET4
RoHS

MTD6P10ET4

MTD6P10ET4

VBsemi

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MTD6P10ET4

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Specifications
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)8.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)250mu03a9@10V,3.6A
Power Dissipation (Pd)32.1W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)41pF@50V
TypePu6c9fu9053
Input Capacitance (Ciss@Vds)1.055nF@50V
Total Gate Charge (Qg@Vgs)11.7nC@4.5V
Operating Temperature-55u2103~+150u2103@(Tj)