MMDT5551
RoHS

MMDT5551

MMDT5551

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MMDT5551

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Specifications
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)200mW
Collector Current (Ic)600mA
DC Current Gain (hFE@Ic,Vce)100@10mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@50mA,5mA
Transistor Type2u4e2aNPN
Operating Temperature+150u2103@(Tj)