FQN1N50CTA
RoHS

FQN1N50CTA

FQN1N50CTA

onsemi

MOSFET N-CH 500V 380MA TO92-3

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FQN1N50CTA

Availability: 10384 pieces
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Specifications
PackageCut Tape (CT),Tape & Box (TB)
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C380mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6Ohm @ 190mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs6.4 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)195 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature890mW (Ta), 2.08W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification